Method of forming thin film and apparatus therefor

Details Method of forming thin film and apparatus therefor Method of forming thin film and apparatus therefor

1987-11-30

1990-05-22

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Work support

118715, 118725, 118728, C23C 1600

Patent

active

049267930

ABSTRACT:
The present invention relates to a method of forming oxide or other insulating films on semiconductor wafers and other substrates and single-crystal films (epitaxial films) having the same crystal orientation as that of the substrates according to chemical reactions between reaction gases or chemical reactions between the reaction gas and the substrates, and an apparatus therefor such as an epitaxial growth apparatus, an oxidation apparatus, or the like, and more particularly, a method of forming a uniform thin film on each of a large number of substrates and an apparatus therefor.
According to an aspect, vertical sets of substrates are stacked in a peripheral space radially spaced apart from a central portion of the active space by a predetermined distance. A reaction gas has passed through a reaction region on a surface of one substrate can be exhausted outside the reactor without affecting a reaction region on a surface of another substrate. The number of substrates to be treated can be greatly increased, and at the same time uniformities of thickness, resistivity, and other qualities between substrates and within each substrate can be greatly improved.
When a hot wall type apparatus is employed, attachment of reaction byproducts dropping from the inner wall surface of the reactor to the surfaces of the substrates can be prevented. Even if a plurality of substrates are arranged immediately below the reaction gas outlet port, the reaction gas can be flowed under a laminar flow condition, has a uniform temperature profile and can be flowed in the reaction region on the surface of each substrate. The above mentioned effects of the present invention is further enhanced.

REFERENCES:
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