Method of forming thin, defect-free, monocrystalline layers of s

Details Method of forming thin, defect-free, monocrystalline layers of s Method of forming thin, defect-free, monocrystalline layers of s

1987-08-11

1988-05-10

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG93, 156DIG88, 437 17, 437 19, H01L 21265, H01L 21225

Patent

active

047435674

ABSTRACT:
A structure comprising thin defect-free monocrystalline layer of a silicon of an insulating layer is produced from a structure comprising a thin recrystallizable layer of silicon on an insulating layer by use of a low softening point insulating layer, scanning the structure relative to a zone heater the beams of which are focused on the recrystallizable silicon layer so as to form a melt zone having a convex solid-liquid interface in the silicon layer while forming a liquid area under the melt zone in the insulating layer.

REFERENCES:
patent: 4309225 (1982-01-01), Fan et al.
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4473433 (1984-09-01), Bosch et al.
patent: 4479846 (1984-10-01), Smith et al.
patent: 4559086 (1985-12-01), Hawkins
patent: 4564403 (1986-01-01), Hayafuji et al.
patent: 4581620 (1986-04-01), Yamazaki et al.
patent: 4650524 (1987-03-01), Kiyama et al.
patent: 4659422 (1987-04-01), Sakurai

Affiliated with

Also associated with

Rating

Method of forming thin, defect-free, monocrystalline layers of s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming thin, defect-free, monocrystalline layers of s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming thin, defect-free, monocrystalline layers of s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1320866