Method of forming thermally stable high resistivity regions in n

Details Method of forming thermally stable high resistivity regions in n Method of forming thermally stable high resistivity regions in n

1985-12-12

1987-06-16

Roy, Upendra

Metal treatment

Barrier layer stock material, p-n type

148 15, 148175, 148187, 29571, 29576B, H01L 21265, H01L 2126

Patent

active

046734465

ABSTRACT:
An InP wafer, comprising a S.I. InP substrate, a n-type InP active layer disposed on the substrate and oxygen implanted isolation regions disposed in the active layer.

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patent: 4601095 (1986-07-01), Kikuchi et al.
patent: 4602965 (1986-07-01), McNally
Publication, Solid-State Electronics, vol. 27, No. 8/9, pp. 817-818, 1984, Device Isolation by Oxygen Implantation in N-Type Indium Phosphide, P. E. Thompson et al.
Bhattacharya et al., J. Appl. Phys. 55 (1984), 509.
Slater et al., Rad. Effects, 83 (Dec. 84) 219.
Roach et al., J. Vac. Sci. Technol. 132 (1984) 512.
Favennec et al., Rev. Phys. Appl. 19 (Mar. 1984) 191.

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