Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-07-20
1991-09-10
Morgenstern, Norman
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505731, 505742, 505730, 20419224, 427 62, 427 531, 427 38, C23C 1434, B05D 306, B05D 512
Patent
active
050473859
ABSTRACT:
A method of forming a superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x thin film with selected crystal orientation is described which comprises the steps of sputtering simultaneously Y, Ba and Cu onto the surface of a substrate, introducing oxygen at said surface during deposition, controlling the stoichiometry of the elements Y, Ba or both richer or poorer than the 1:2:3 stoichiometry within a few atom percent and followed by annealing to selectively grow an a-axis or a c-axis oriented film of YBa.sub.2 Cu.sub.3 O.sub.7-x.
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Hor et al., "Superconductivity Above 90K in the Square-Planar Compound System ABa.sub.2 Cu.sub.3 O.sub.6+x With A.dbd.Y, La, Nd, Sm, Eu, Gd, Ho, Er, and Lu", Phys. Rev. Lett., vol. 58(18), May 1987, pp. 1891-1894.
Aizaki et al., "YBa.sub.2 Cu.sub.3 O.sub.y Superconducting Thin Film Obtained by Laser Annealing", Jpn. J. Appl. Phys., 27(2), Feb. 1988, L 231-233.
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"Thin-Film Synthesis of the High-T.sub.c Oxide Superconductor YBa.sub.2 Cu.sub.3 O.sub.7 by Electron-Beam Codeposition", M. Naito et al., J. Mater. Res., 2(6), Nov./Dec. 1987, pp. 713-725.
"Reactive Magnetron Sputtering of Thin-Film Superconductor YBa.sub.2 Cu.sub.3 O.sub.7-x ", K. Char et al., Appl. Phys. Lett., 51(17), Oct. 26, 1987, pp. 1370-1372.
Beasley Malcolm R.
Char Kook-rin
Geballe Theodore H.
Hammond Robert H.
Kapitulnik Aharon
King Roy V.
Morgenstern Norman
The Board of Trustees of the Leland Stanford Junior University
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