Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-12-04
2007-12-04
Elms, Richard T. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C438S003000
Reexamination Certificate
active
11179251
ABSTRACT:
A super-paramagnetic cladding layer formed on from 1 to 3 sides of a conductive line in a magnetic device is disclosed. The cladding layer is made of “x” ML/SL stacks in which x is between 5 and 50, SL is an amorphous AlOxseed layer, and ML is a composite with a soft magnetic layer comprised of discontinuous particles less than 2 nm in size on the seed layer and a capping layer of Ru, Ta, or Cu on the soft magnetic layer. Fringing fields and hysteresis effects from continuous ferromagnetic cladding layers associated with switching the magnetic state of an adjacent MTJ are totally eliminated because of the super-paramagnetic character of the soft magnetic layer at room temperature. The soft magnetic layer has near zero magnetostriction, very high susceptibility, and may be made of Ni˜80Fe˜20, Ni˜30Fe˜70, Co˜90Fe˜10, or CoNiFe.
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Guo Yimin
Wang Po-Kang
Ackerman Stephen B.
Elms Richard T.
Lulis Michael
MagIC Technologies, Inc.
Saile Ackerman LLC
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