Method of forming substrate for use in imager devices

Details Method of forming substrate for use in imager devices Method of forming substrate for use in imager devices

2011-07-26

2011-07-26

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S459000, C257SE21122

Reexamination Certificate

active

07985658

ABSTRACT:
A method of fabricating a semiconductor substrate structure comprises forming an oxide region in contact with a first semiconductor, e.g. silicon, substrate, implanting P-type dopants into the first semiconductor substrate to form a P-doped region, bonding the oxide region to a second semiconductor, e.g. silicon, substrate, and removing a portion of the first semiconductor substrate before or after implanting.

REFERENCES:
patent: 5773355 (1998-06-01), Inoue et al.
patent: 5940685 (1999-08-01), Loomis et al.
patent: 6867495 (2005-03-01), Czagas et al.
patent: 7195987 (2007-03-01), Bae et al.
patent: 2004/0014299 (2004-01-01), Moriceau et al.
patent: 2007/0176238 (2007-08-01), Seacrist
patent: 2008/0017946 (2008-01-01), Cazaux et al.
patent: 2008/0224247 (2008-09-01), Hsu et al.

Affiliated with

Also associated with

Rating

Method of forming substrate for use in imager devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming substrate for use in imager devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming substrate for use in imager devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2645993