Method of forming substrate contact trenches and isolation trenc

Details Method of forming substrate contact trenches and isolation trenc Method of forming substrate contact trenches and isolation trenc

1992-06-18

1993-06-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 71, 437228, 437968, 148DIG50, 148DIG117, H01L 2176

Patent

active

052179206

ABSTRACT:
A method of fabricating a semiconductor structure includes providing a substrate having at least one layer formed thereon. At least two trenches are formed through the layer and into the substrate wherein at least one trench is for isolation and at least one trench is for making contact to the substrate. After a trench liner is formed on the sidewalls of the trenches, the trenches are filled with doped semiconductor material. The doped semiconductor material in the trench for isolation is then anodized. After the anodization, the anodized trench fill material is oxidized.

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Turner, "Electropolishing Silicon in Hydrofluoric Acid Solution", Journal of the Electrochem. Soc., Jul. 1958; pp. 402-408.
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Unagami et al., "Study of Injection Type IPOS Scheme", Jap. Journal of Appl. Phys., vol. 16, No. 9, Sep. 1977 pp. 1635-1640.
Labunov et al. "Investigation of Porous Silicon Formation During Anodic Treatment in Aqueous HF"; Thin Solid Films, 64 (1979) pp. 479-483.
Unagami et al., "An Isolation Technique Using Oxidized Porous Silicon", JARECT, vol. 8, Semiconductor Technologies, (1983).

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