Method of forming substrate

Details Method of forming substrate Method of forming substrate

2005-02-08

2005-02-08

Vargot, Mathieu D. (Department: 1732)

Plastic and nonmetallic article shaping or treating: processes

Optical article shaping or treating

Nonresinous material only

C117S088000, C117S952000, C264S081000

Reexamination Certificate

active

06852253

ABSTRACT:
Provided is a method of forming a substrate with which a good-quality substrate having few cracks is obtained. On a growth base made of sapphire with a thickness of smaller than or equal to 100 μm, a GaN substrate is grown as heating the growth base, and cooling is provided therefor. At this time, the thickness of the substrate subject to growth is made larger than or equal to 200 μm and the curvature thereof is made smaller than or equal to 0.03 cm−1, the curvature being caused by the difference in thermal expansion coefficients of the growth base and the substrate. Thus, even though the substrate is warped due to the cooling after the growth, occurrence of crack in the substrate is prevented and the good-quality substrate is obtained.

REFERENCES:
patent: 6177292 (2001-01-01), Hong et al.
patent: 6211095 (2001-04-01), Chen et al.
patent: 6252261 (2001-06-01), Usui et al.
patent: 10-256662 (1998-09-01), None
Nakamura, Shuji, “High-Power Ga P-N Junction Blue Light Emitting Diodes” 12/91 Japanese Journal vol. 30, No. 12A pp. L 1998-L 2001.
Polian, Grimsditch, and Grezegory, “Elastic Constraints of gallium nitride” Apr. 15, 1996, J.App.Phys.,vol. 79,No. 6.
G.H. Olsen and M. Ettenburg, “Calculated stresses in multilayered heteroepitaxial structures” 06/77, Journal of Applied Physics, vol. 48, No. 6.
Hiramatsu, Detchprohm, and Akasaski, “Relaxation Nechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy” 04/93, jon. J. Appl. Phys. vol. 23 Part 1, No. 4 pp. 1528-1533.
Bernstein, “Elastic Constants of Synthetic Sapphire at 27oC” 01/63, Journal of Applied Physics vol. 34, No. 1 pp. 169-172.

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