Method of forming substantially L-shaped silicide contact...

Details Method of forming substantially L-shaped silicide contact... Method of forming substantially L-shaped silicide contact...

2006-05-18

2008-10-28

Gurley, Lynne A. (Department: 2811)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S666000, C438S682000, C257SE23011

Reexamination Certificate

active

07442619

ABSTRACT:
A method of manufacturing a semiconductor device having a substantially L-shaped silicide element forming a contact is disclosed. The substantially L-shaped silicide element, inter alia, reduces contact resistance and may allow increased density of CMOS circuits. In one embodiment, the substantially L-shaped silicide element includes a base member and an extended member, wherein the base member extends at least partially into a shallow trench isolation (STI) region such that a substantially horizontal surface of the base member directly contacts a substantially horizontal surface of the STI region; and a contact contacting the substantially L-shaped silicide element. The contact may include a notch region for mating with the base member and a portion of the extended member, which increases the silicide-to-contact area and reduces contact resistance. Substantially L-shaped silicide element may be formed about a source/drain region, which increases the silicon-to-silicide area, and reduces crowding and contact resistance.

REFERENCES:
patent: 5780348 (1998-07-01), Lin et al.
patent: 5913124 (1999-06-01), Lin et al.
patent: 6017801 (2000-01-01), Youn
patent: 6133105 (2000-10-01), Chen et al.
patent: 6265302 (2001-07-01), Lim et al.
patent: 6649489 (2003-11-01), Chang et al.
patent: 6667204 (2003-12-01), Kim
patent: 6847086 (2005-01-01), Kim
patent: 7227224 (2007-06-01), Ko et al.
patent: 2007/0138570 (2007-06-01), Chong et al.

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