Method of forming sub-micron-size structures over a substrate

Details Method of forming sub-micron-size structures over a substrate Method of forming sub-micron-size structures over a substrate

2005-05-03

2005-05-03

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Masking of sidewall

C216S002000, C216S041000, C438S696000, C438S947000

Reexamination Certificate

active

06887395

ABSTRACT:
A method is provided for forming sub-micron-size structures over a substrate. A width-defining step is formed over the substrate. A width-defining layer is formed over an edge of the width-defining step. The width-defining layer is etched back to leave a spacer adjacent the width-defining step. A length-defining step is formed over the substrate. A length-defining layer is formed over an edge of the length-defining step. The length-defining layer is etched back to leave a spacer adjacent a first edge of the length-defining step and across a first portion of the spacer left by the width-defining layer. The length-defining step is then removed. The spacer left by the width-defining layer is then etched with the spacer left by the length-defining layer serving as a mask, to form the structure.

REFERENCES:
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patent: 4536951 (1985-08-01), Rhodes et al.
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 6225201 (2001-05-01), Gardner et al.
patent: 6664173 (2003-12-01), Doyle et al.
patent: 20030235948 (2003-12-01), Park

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