Method of forming stacked capacitor having corrugated side-wall

Details Method of forming stacked capacitor having corrugated side-wall Method of forming stacked capacitor having corrugated side-wall

1996-08-23

1998-12-22

Ledynh, Bot L.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438396, 438397, 438253, 438255, 3613214, 3613215, H01L 2170

Patent

active

058518983

ABSTRACT:
A method of forming a capacitor that has improved charge storage capability and a capacitor produced by such method are provided. The method utilizes an additional layer of oxide spacer consisting of a plurality of oxide layers deposited by two alternating methods of thermal CVD and plasma CVD. After a contact hole is first etched by a plasma etching technique, the hole is again etched by an etchant such as hydrogen fluoride which has a high selectivity toward oxide layers formed by the plasma CVD method and a low selectivity toward oxide layers formed by the thermal CVD method. As a result, a corrugated side-wall of the contact hole is formed which affords the capacitor cell with a substantially increased surface area leading to an improved charge storage capability.

REFERENCES:
patent: 5110752 (1992-05-01), Lu
patent: 5494841 (1996-02-01), Dennison et al.

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