Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1998-05-08
2000-04-04
Tsai, Jey
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438253, 438676, 438659, H01G 706
Patent
active
060460598
ABSTRACT:
The present invention includes a method of improving conductivity between an electrode and a plug in a stacked capacitor where an oxide has formed therebetween. The method includes the steps of bombarding the oxide with ions and mixing the oxide with materials of the electrode and the plug to increase a conductivity between the electrode and the plug. A method of forming a diffusion barrier within an electrode in a stacked capacitor includes the steps of providing a stacked capacitor having a plug coupled to an electrode and bombarding the electrode with ions to form the diffusion barrier within the electrode such that the diffusion barrier is electrically conductive. A stacked capacitor in accordance with the present invention includes an electrode, a plug for electrically accessing a storage node, the plug being coupled to the electrode and a barrier layer disposed within the electrode for preventing diffusion of materials which reduce conductivity between the electrode and the plug.
REFERENCES:
patent: 5828129 (1998-10-01), Roh
patent: 5854104 (1998-12-01), Onishi et al.
Hoepfner Joachim
Shen Hua
Paschburg Donald B.
Siemens Aktiengesellschaft
Tsai Jey
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