Method of forming smooth polycrystalline silicon electrodes...

Details Method of forming smooth polycrystalline silicon electrodes... Method of forming smooth polycrystalline silicon electrodes...

2007-03-13

2007-03-13

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

Reexamination Certificate

active

11127917

ABSTRACT:
A method is provided for forming smooth polycrystalline silicon electrodes for molecular electronic devices. The method comprises: depositing a silicon layer in an amorphous form; forming a native oxide on a surface of the amorphous silicon layer at a temperature between room temperature to 500° C.; and converting the amorphous silicon to polycrystalline silicon by heat-treating at a temperature in a range of 600° to 800° C. for a period of time in a range of 1 minute to 24 hrs, with higher temperatures associated with shorter times, in an inert atmosphere. The method converts the amorphous form of silicon to the higher conductivity polycrystalline form, while retaining the smoothness associated with the amorphous form.

REFERENCES:
patent: 5843829 (1998-12-01), Kuramae et al.
patent: 5869389 (1999-02-01), Ping et al.
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6314019 (2001-11-01), Kuekes et al.
patent: 6395610 (2002-05-01), Roy et al.
patent: 6459095 (2002-10-01), Heath et al.
patent: 6777274 (2004-08-01), Moon et al.
patent: 2005/0014304 (2005-01-01), Moon et al.
C.P. Collier et al., “Electronically Configurable Molecular-Based Logic Gates”, Science, vol. 285, pp. 391-393 (Jul. 16, 1999).
C.P. Collier et al, “A [2]Catenane-Based Solid State Electronically Reconfigurable Switch”, Science, vol. 289, pp. 1172-1175 (Aug. 18, 2000).
M. Sternheim et al, “Properties of Thermal Oxides Grown on Phosphorus In Situ Doped Polysilicon”, Journal of Electrochemical Society, vol. 130, No. 8, pp. 1735-1740 (Aug. 1983).
E. Ibok et al, “A Characterization of the Effect of Deposition Temperature on Polysilicon Properties”, Electrochemical Society, vol. 140, No. 10, pp. 2927-2937 (Oct. 1993).
T. Kamins, “Polycrystalline Silicon for Integrated Circuit Applications”, p. 148, Kluwer Academic, Boston, MA (1988).
S. Wolf et al., “Silicon Processing for the VLSI ERA”, vol. 1 (“Process Technology”), pp. 303-308, Lattice Press, Sunset Beach, CA, 1986.

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