Method of forming single-crystalline thin film using beam irradi

Details Method of forming single-crystalline thin film using beam irradi Method of forming single-crystalline thin film using beam irradi

1996-02-13

1999-11-30

Chang, Celia

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

117 7, 117 9, 117 10, 438511, H01L 21203

Patent

active

059935383

ABSTRACT:
In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate.

REFERENCES:
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Hewett et al. "Amorphous phase formation and recrystallization in ion-implanted silicides" INSPECT A86050549, 1985.
Patent Abstracts of Japan, vol. 10, No. 107 (C-341), Apr. 22, 1986, JP 60 235788, Nov. 22, 1985.
Patent Abstracts of Japan, vol. 14, No. 543 (C-0783), Nov. 30, 1990, JP 02 229792, Sep. 12, 1990.
Patent Abdstracts of Japan, vol. 95, No. 3, Apr. 28, 1985, JP 06 340500, Dec. 13, 1994.
Ion Beam Deposition, Film Modification and Synthesis, S.M. Rossnagel and J.J. Cuomo, MRS Bulletin, Deposition Process Part II, Dec. 1986, vol. XIII, No. 12.
Subsurface Processing of Electronic Materials Assisted by Atomic Displacements, J.S. Williams, MRS Bulletin, vol. 17, No. 6 (Jun.) 1992, pp. 47-51.

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