Method of forming single crystalline electrical isolated wells

Details Method of forming single crystalline electrical isolated wells Method of forming single crystalline electrical isolated wells

1993-01-04

1995-06-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 74, 437 78, 437 89, 437 90, 437956, 257565, H01L 21302

Patent

active

054222990

ABSTRACT:
A quasi-dielectrically isolated (QDI) bipolar structure using epitaxial lateral overgrowth (ELO) uses a combination of dielectric isolation (DI) and junction isolation (JI), providing better isolation properties than JI, while providing better heat dissipation than DI. ELO silicon is grown out of a deep basin with oxide sidewalls for lateral dielectric isolation. The ELO silicon is grown at a low temperature and pressure in an RF heated pancake-type reactor. Fabricated transistors have gains, ideality factors, and leakage currents comparable to bulk devices. A main application for QDI is in power integrated circuits (PICs) where isolation of high power devices and low power logic is necessary.

REFERENCES:
patent: 4506435 (1985-03-01), Pliskin et al.
patent: 5034342 (1991-07-01), Sidner et al.

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