Method of forming single-crystal semiconductor films

Details Method of forming single-crystal semiconductor films Method of forming single-crystal semiconductor films

1992-05-04

1994-08-16

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117904, C30B 2302

Patent

active

053383885

ABSTRACT:
A method of forming single-crystal semiconductor films, in which a single-crystal semiconductor substrate having a crystal axis transferred from a single-crystal semiconductor substrate is formed on an insulator layer via a seed hole which goes through the insulator layer which is formed on the single-crystal semiconductor substrate, comprises the steps of: forming a non-single-crystal semiconductor substrate connected to a single-crystal semiconductor substrate via a seed hole on an insulator layer; irradiating a compound beam which includes a first energy beam having a power density which is capable of melting a non-single-crystal semiconductor film and a second energy beam having a power density which is not capable of melting the non-single-crystal semiconductor film but capable of softening the insulator layer positioned below the non-single-crystal semiconductor film; and epitaxially growing the single-crystal semiconductor film in such a way that the non-single-crystal semiconductor film is melted and then solidified again by scanning the surface of the non-single-crystal semiconductor film with the compound beam, starting from the seed hole, in such a manner that the first energy beam is irradiated first and the second energy beam is irradiated second.

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J. Appl. Phys., vol. 62, No. 10, Nov. 15, 1987, pp. 4178-4181, K. Sugahara, et al., "Orientation Control of the Silicon Film on Insulator by Laser Recrystallization".
Mat. Res. Soc. Symp. Proc. 164, 1990, pp. 371-376, K. Sugahara, et al., "Crystal-Axis-Rotation of Laser-Recrystallized Silicon on Insulator" (Aug. 6, 1987).

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