Method of forming single crystal layer on dielectric layer by co

Details Method of forming single crystal layer on dielectric layer by co Method of forming single crystal layer on dielectric layer by co

1986-03-26

1987-12-22

Roy, Upendra

Fishing, trapping, and vermin destroying

427 531, 437 21, 437173, 437942, 437235, 148DIG93, H01L 21263, C30B 1306

Patent

active

047146842

ABSTRACT:
In a method of manufacturing a semiconductor device of a three-dimensional structure having a semiconductor substrate and another single crystal semiconductor layer formed thereon, the another single crystal semiconductor layer is prepared by melting a vapor-deposited amorphous or polycrystalline semiconductor layer by the energy of laser beams then solidifying and converting the layer into single crystals. For initiating the melting at selected regions of the layer, the layer is formed at the surface thereof with a silicon nitride film of a uniform thickness and a silicon nitride film with a thickness at the region corresponding to the selected region different from that of the remaining region. The region thicker or thinner than other region reflects the laser energy at different reflectivity thereby to provide a desired temperature distribution.

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