Method of forming silicon on oxide semiconductor device structur

Details Method of forming silicon on oxide semiconductor device structur Method of forming silicon on oxide semiconductor device structur

1995-03-01

1996-01-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437 59, 437 63, 437 67, 148DIG10, 148DIG11, 148DIG12, 148DIG50, 148DIG151, 257347, 257507, H01L 21265

Patent

active

054847389

ABSTRACT:
A bonded, SOI wafer which has stepped isolation trenches and sublayer interconnections first formed in a bulk silicon wafer. After these process steps are complete, a thin polysilicon layer is formed on the planarized upper surface of the bulk silicon wafer. This thin polysilicon layer is then bound to an oxide layer on the surface of a separate wafer to form a bonded silicon-on-oxide structure. The entire assembly is, in effect inverted, and what had been the lower surface of the bulk silicon wafer, is removed to the bottom of the deepest trench step. In this bonded SOI structure, regions between the trenches are deep and suitable for bipolar device fabrication, while the trench steps form shallow regions suitable for fabrication of CMOS devices.

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