Method of forming silicon nitride with varied hydrogen concentra

Details Method of forming silicon nitride with varied hydrogen concentra Method of forming silicon nitride with varied hydrogen concentra

1996-12-13

1998-02-03

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

148DIG114, H01L 21318

Patent

active

057144087

ABSTRACT:
On TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si-H bonds is reduced.

REFERENCES:
patent: 4962065 (1990-10-01), Brown et al.
Tatsuuma et al: "Hot Carrier Effects", Influence of Mechanical Stress, The Technical Studies Reports at the Electronic Data Communication Learned Society 90-123, P33-P38.
Okuyama et al: "Measuremenet and analysis of hot carrier degradation of sub micron mosfet devices", (SDM87-155) Hitachi Musashi Works, Hitachi VLSI Engineering, P19-P24.
Yasuada: "Plasma CVD Technilogy and Its Applications", (Applied Physics, vol. 50, 6th Issue (1981), P638-P649.
Rosler: "Development of Plasma CVD Devices in Market", Solid State Technology, Aug. 1991 Issue, P28-P34.
Sun et al: "Effects of Silicon Nitride Encapsulation of MOS Device Stability", IEEE 1980 pp. 244-251.
Flamm et al: "A New Chemistry for Low Hydrogen PECVD Silicon Nitride", Technology Topies, Mar. 1987 Issue, P43-P44.
Chang et al:, "Low Stress, Low Hydrogen Nitride Deposition", Solid State Technology, Technology Topics May 1988 Issue, P193-P195.

Affiliated with

Also associated with

Rating

Method of forming silicon nitride with varied hydrogen concentra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming silicon nitride with varied hydrogen concentra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming silicon nitride with varied hydrogen concentra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-661969