Method of forming silicon nitride film and product

Details Method of forming silicon nitride film and product Method of forming silicon nitride film and product

1985-11-14

1987-10-13

Childs, Sadie L.

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

427 94, 427255, 4272552, 428446, 437241, B32B 904, C23C 1634

Patent

active

046998250

ABSTRACT:
In forming a silicon nitride film by the low-pressure CVD method using a silane gas and ammonia, the reaction pressure is set to lie over a range of from about 0.05 to about 0.25 Torr, enabling a silicon nitride film to be formed, of uniform thickness, highly efficiently even on large wafers, and maintaining high yield, improved uniformity and good quality as a whole without decreasing the film-forming efficiency. Preferably, the reaction pressure is maintained over a range of from 0.1 to 0.2 Torr to further increase the efficiency, while preferably maintaining the temperature over a range of from 700.degree. to 1000.degree. C.

REFERENCES:
patent: 3485666 (1969-12-01), Sterling et al.
patent: 3540926 (1970-11-01), Rairden
patent: 3637423 (1972-01-01), Sestrich
patent: 3798061 (1974-03-01), Yamazaki
patent: 4142004 (1979-02-01), Hauser et al.
patent: 4279947 (1981-07-01), Goldman et al.
patent: 4404236 (1983-09-01), Komatsu et al.
Ginsburgh et al, "Silicon Nitride Chem. Vapor Deposition in a Hot-Wall Diffusion System", J. Electrochem. Sci & Tech., vol. 125, No. 9, pp. 1557-1559, Sep. 1978.
Olcaytug et al, "A Low Temperature Process for the Reactive Formation of Si.sub.3 N.sub.4 Layers on InSb", Thin Solid Films, vol. 67, pp. 321-324, 1980.

Affiliated with

Also associated with

Rating

Method of forming silicon nitride film and product does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming silicon nitride film and product, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming silicon nitride film and product will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-410858