Method of forming silicon impregnated foraminous sheet by immers

Metal treatment – Compositions – Heat treating

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29572, 136 89TF, 148171, 148174, 148 33, 156DIG88, 357 4, 357 30, 357 59, 427 74, 427 86, 427113, 427431, 427434R, 428408, 428446, H01L 21208, H01L 2184, H01L 2714

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041719913

ABSTRACT:
A foraminous sheet of carrier substrate is formed by immersing the sheet in a bath of molten silicon. After cooling, the coated sheet is suitable for use in making a photovoltaic cell.

REFERENCES:
patent: 2840489 (1958-06-01), Kempter et al.
patent: 3078328 (1963-02-01), Jones
patent: 3632444 (1972-01-01), Grotheer et al.
patent: 3729342 (1973-04-01), Te Velde
patent: 3770488 (1973-11-01), Pepper et al.
patent: 3860443 (1975-01-01), Lachman et al.
patent: 3969163 (1976-07-01), Wakefield
patent: 4032371 (1977-06-01), Andersen
Heaps, et al., "Dip-Coated Sheet Silicon Solar Cells", Conf. Record, 12th IEEE, Photo-Voltaic Spec. Conf., Nov. 15-18, 1976, pp. 147-150.
Zoutendyk; J. A., "Development of Low Cost Silicon....Solar Energy..", Solar Energy, vol. 20, pp. 249-259 (1978).
Ciszek, et al., "Inexpensive Silicon Sheets For Solar Cells", NASA Tech. Briefs, Winter 1977, vol. 2, No. 4, pp. 432-433.

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