Method of forming silicon film having jagged surface

Details Method of forming silicon film having jagged surface Method of forming silicon film having jagged surface

1994-12-27

1996-08-06

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437919, 437200, 437977, 148DIG138, H01L 2170, H01L 2700

Patent

active

055433472

ABSTRACT:
First, a metal layer is deposited on a silicon film surface to form a silicide layer in an interface between the silicon film and the metal layer. Subsequently, the metal layer is all removed by etching such that silicide islands are left on the surface of the silicon film, and then the exposed silicon film surface is dry-etched by using the silicide islands as a selective mask.

REFERENCES:
patent: 5110752 (1992-05-01), Lu
patent: 5182232 (1993-01-01), Chhabra et al.
patent: 5256587 (1993-10-01), Jun et al.

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