Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1975-04-14
1977-01-11
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
65 3A, 148174, 427 93, 350 96WG, H01L 2118
Patent
active
040025128
ABSTRACT:
A method of depositing a layer comprising SiO.sub.2 on a surface of a substrate at a rate which is temperature independent is disclosed. The method includes combining dichlorosilane (SiH.sub.2 Cl.sub.2) with an oxidizing gas, such as O.sub.2, CO.sub.2, N.sub.2 O, H.sub.2 O, to form SiO.sub.2.
REFERENCES:
patent: R28028 (1974-06-01), Maurer
patent: R28029 (1974-06-01), Keck et al.
patent: 3117838 (1964-01-01), Sterling et al.
patent: 3212922 (1965-10-01), Sirtl
patent: 3331716 (1967-07-01), Bloem et al.
patent: 3404451 (1968-10-01), So
patent: 3459673 (1969-08-01), Best et al.
patent: 3642521 (1972-02-01), Moltzan et al.
patent: 3659915 (1972-05-01), Maurer et al.
patent: 3669693 (1972-06-01), Dalton et al.
patent: 3737292 (1973-06-01), Keck et al.
patent: 3737293 (1973-06-01), Maurer
patent: 3782914 (1974-01-01), DeLuca et al.
Steinmeyer et al., "Successive Growth of Si and SiO.sub.2 -- etc.", J. Electrochem. Soc., Feb. 1964, vol. III, No. 2, pp. 206-209.
Tung et al., "The Deposition of Oxide on Silicon --- etc.", Trans. of Met. Soc. of AIME, vol. 233, Mar. 1965, pp. 572-577.
Chu et al., "Silica Films by the Oxidation of Silane", Trans. of Met. Soc. of AIME, vol. 242, Mar. 1968, pp. 532-538.
Davis J. M.
Rosenstock J.
Rutledge L. Dewayne
Western Electric Company Inc.
LandOfFree
Method of forming silicon dioxide does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming silicon dioxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming silicon dioxide will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1741704