Method of forming silicon carbide films on tantalum containing s

Details Method of forming silicon carbide films on tantalum containing s Method of forming silicon carbide films on tantalum containing s

1985-08-29

1988-05-17

Childs, Sadie L.

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

4272552, 4272554, 4272557, 4274197, C23C 1632, B05D 135

Patent

active

047450070

ABSTRACT:
A process for forming a smooth, continuous coating of silicon carbide upon antalum carbide is disclosed, as are several useful manufacturers produced with the process. A tantalum carbide substrate may be formed directly upon metallic tantulum articles by disclosed means. The material formed with this process has been used to fabricate semiconducting devices including light emitting diodes and selective thermal radiators which can be operate at 1200 degrees C. The method is further useful for producing tantalum metal incandescent light filaments and corrosion resistant tantalum articles.

REFERENCES:
patent: 4196233 (1980-04-01), Bitzer et al.
patent: 4399168 (1983-08-01), Kullander et al.
Powell et al., "Vapor Depositing", pp. 366-367, TS695 P6, 1966.

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