Method of forming silicon carbide

Details Method of forming silicon carbide Method of forming silicon carbide

1992-09-30

1994-03-22

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 99, 427249, 4272552, 4273977, C23C 1600

Patent

active

052962580

ABSTRACT:
A low temperature CVD method is provided for depositing high quality stoichiometric, poly-crystalline silicon carbide films and for depositing emitter quality, heavily doped silicon carbide films, suitable for application in silicon hetero-junction bipolar transistors. The process is compatible with bipolar-CMOS device processing and comprises pyrolysis of di-tert-butyl silane in an oxygen free ambient, with n-type doping provided by phosphorus source comprising tert-butyl phosphine. Advantageously oxygen is excluded from the reactant gas mixture and the method includes pre-cleaning the susbtrate with nitrogen trifluoride and passivating the silicon carbide film with fluorine species from nitrogen trifluoride.

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patent: 5053255 (1991-10-01), Boeglin
patent: 5061514 (1991-10-01), Boeglin
Tay, S. P., et al, Materials Research Society Meeting, Symposium G. Abstract G7.3, Boston, Dec. 1991.
T. Sugii, et al., Proceedings of First Topical Symposium on Silicon Based Heterostructures, edited by S. S. Iyer et al., Toronto, Canada, Oct. 90, p. 124.
"Refractive Index and Birefringence of 2 H Silicon Carbide", J. Anthony Powell, Journal of the Optical Society of America, vol. 62, No. 3, Mar. 1972.
"Refractive Index and Dispersion of Beta Silicon Carbide", Peter T. B. Shaffer, et al, The Carborundum Company, Niagara Falls, New York (Jul. 3, 1969).

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