Method of forming silicon and oxygen containing layers

Details Method of forming silicon and oxygen containing layers Method of forming silicon and oxygen containing layers

1987-03-19

1989-07-18

Childs, Sadie

Coating processes

Coating by vapor, gas, or smoke

427255, 4272552, 4272553, C23C 1630

Patent

active

048492590

ABSTRACT:
Layers containing silicon and oxygen are formed by means of low pressure chemical vapor deposition. As a source for silicon and oxygen, tetraethylorthosilicate (TEOS) is used which is drawn into the low pressure area of the deposition apparatus in liquid form and evaporated there. If necessary, oxygen is introduced into the low pressure area. The reactants are directed into the reaction zone which has been heated to a predetermined temperature, and reacted there. The reaction product is deposited onto the substrates provided therein. If the deposited layer is to comprise still further elements, liquid substances containing such elements are mixed with the liquid TEOS prior to being drawn into the evaporating area, in a ratio adapted to the desired layer composition. Both with respect to layer thickness and composition the layers deposited are highly homogeneous.

REFERENCES:
patent: 3158505 (1964-11-01), Sandor
patent: 3571914 (1971-03-01), Lands et al.
patent: 3934060 (1976-01-01), Burt et al.
patent: 4557950 (1985-12-01), Foster et al.
patent: 4619844 (1986-10-01), Pierce et al.
Powell et al., "Vapor Deposition", pp. 391-397, 401-402 and 604-606, 1967, TS695 P6.
Oroshnik et al., "Pyrolytic Deposition of Silicon Dioxide in an Evacuated System", J. Electrochem. Soc.: Solid State Science, pp. 649-652, Jun. 1968, vol. 115, No. 6.
Smolinsky et al., "Measurements of Temperature Dependent Stress of Silicon Oxide Films Prepared by a Variety of CVD Methods" J. Electrochem. Soc.: Solid-State Science and Technology, vol. 132, No. 4, pp. 950-954, Apr. 1985.
Journal of the Electrochemical Soc., Band 118, Nr. 9, Sep. 1971, pp. 1540-1542; J. Wong et al., "Chemical Vapor Deposition of Arsenosilicate Glass: A One-Liquid-Source System".
IBM Technical Disclosure Bulletin, vol. No. 8, Jan. 1966, p. 1141, W. Hoffmeister et al., "Producing Doped Silicon Dioxide Layers".

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