Method of forming silicide in integrated circuit manufacture

Details Method of forming silicide in integrated circuit manufacture Method of forming silicide in integrated circuit manufacture

1991-12-27

1995-10-24

Quach, T. N.

Fishing, trapping, and vermin destroying

437193, 437195, 437228, 148DIG19, H01L 21283

Patent

active

054610052

ABSTRACT:
Electrical discontinuities in a silicide formed on a patterned surface are prevented by forming metal fillets in the recesses of the patterned polysilicon covered surface, and then depositing a metal layer and reacting with silicon to form the silicide. The fillet provides extra metal at a place where there is typically a deficiency in conventional deposition techniques.

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J. Electrochemical Society, vol. 137, No. 2, Feb. 1990, "The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self-Aligned Silicide Technology," by Ku et al., pp. 729-740.
Applied Physics Letters, 48(23), Jun. 9, 1986, "Morphological Degradation of TiSi.sub.2 on 100 Silicon," by P. Reversz, et al., pp. 1591-1593.
J. of Applied Physics 57(12), Jun. 15, 1985, "Metastable Phase Formation in Titanium-Silion Thin Films," by Robert Beyers and Robert Sinclair, pp. 5240-5245.

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