Method of forming sidewall spacers

Details Method of forming sidewall spacers Method of forming sidewall spacers

2008-01-08

2008-01-08

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C438S706000

Reexamination Certificate

active

11177216

ABSTRACT:
A substrate comprising a first transistor element and a second transistor element is provided. A layer of a material is deposited over the first transistor element and the second transistor element. A portion of the layer of material is modified, which may be done, e.g., by irradiating the portion with ions or performing an isotropic etching process to reduce its thickness. An etching process adapted to remove the modified portion of the layer of material more quickly than an unmodified portion of the layer located over the second transistor element is performed.

REFERENCES:
patent: 4839311 (1989-06-01), Riley et al.
patent: 6187620 (2001-02-01), Fulford, Jr. et al.
patent: 6696334 (2004-02-01), Hellig et al.
patent: 2004/0188769 (2004-09-01), Tsuno
patent: 2005/0051866 (2005-03-01), Wang et al.
patent: 2005/0106890 (2005-05-01), Schroeder et al.
patent: 196 54 738 (1997-07-01), None

Affiliated with

Also associated with

Rating

Method of forming sidewall spacers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming sidewall spacers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming sidewall spacers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3936844