Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-05-03
2011-05-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257SE21419
Reexamination Certificate
active
07935561
ABSTRACT:
A method for forming a shielded gate field effect transistor includes the following steps. Trenches are formed in a semiconductor region of a first conductivity type. A shield electrode is formed in a bottom portion of each trench, the shield electrode being insulated from the semiconductor region by a shield dielectric. A gate electrode recessed in each trench is formed over the shield electrode, the gate electrode being insulated from the shield electrode. Using a first mask, a body region of a second conductivity type is formed in the semiconductor region by implanting dopants. Using the first mask, source regions of the first conductivity type are formed in the body region by implanting dopants.
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Fairchild Semiconductor Corporation
Fourson George
Kilpatrick Townsend & Stockton LLP
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