Method of forming shallow trench isolation structures

Details Method of forming shallow trench isolation structures Method of forming shallow trench isolation structures

2000-01-24

2000-11-21

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438199, 438221, 438302, 438433, H01L 2176

Patent

active

061502359

ABSTRACT:
A method for forming shallow trench isolation (STI) structures on a semiconductor substrate is disclosed. First a semiconductor substrate with a first area and a second area adjacent to the first area is provided. A mask layer is formed on the substrate, and is etched to expose portions of the substrate. A first photoresist is formed to cover the second area for exposing the first area. A first implanting procedure is performed with a titled angle to form first doping areas on the substrate encroaching into portions of the substrate covered by the first photoresist. The first photoresist is removed. A second photoresist is formed on the substrate to cover the first area for exposing the second area. And a second implanting procedure is done with a titled angle to form second doping areas on the substrate encroaching into portions of the substrate covered by the second photoresist. The second photoresist is removed. The substrate is etched to remove the first doping areas and the second doping areas for forming trench structures therein. It is noted that portions of the first doping areas and the second doping areas are residual in upper portions of sidewalls of the trench structures adjacent to the mask layer. Then the shallow trench isolations are formed in the trench structures.

REFERENCES:
patent: 5401998 (1995-03-01), Chiu et al.
patent: 5786262 (1998-07-01), Jang et al.
patent: 5795801 (1998-08-01), Lee
patent: 5851900 (1998-12-01), Chu et al.
patent: 5960276 (1999-09-01), Liaw et al.

Affiliated with

Also associated with

Rating

Method of forming shallow trench isolation structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming shallow trench isolation structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming shallow trench isolation structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1256367