Method of forming shallow trench isolation

Details Method of forming shallow trench isolation Method of forming shallow trench isolation

1999-04-05

2000-07-25

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438427, 438435, 438437, 148DIG50, H01L 2176

Patent

active

060936215

ABSTRACT:
A method of fabricating a shallow trench isolation. A pad oxide and a dielectric layer are formed on a substrate. A trench is formed in the substrate penetrating through the pad oxide layer and the dielectric layer. The dielectric layer around the edge of the trench is removed to expose the substrate. The trench is filled to form a T-shaped insulation plug.

REFERENCES:
patent: 5940716 (1999-08-01), Jin et al.
patent: 5960297 (1999-09-01), Saki
patent: 5963819 (1999-10-01), Lan
patent: 5976948 (1999-11-01), Werner et al.
patent: 5981356 (1999-11-01), Hsueh et al.
patent: 5989975 (1999-11-01), Kuo

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