Method of forming shallow n-type region with arsenic or antimony

Details Method of forming shallow n-type region with arsenic or antimony Method of forming shallow n-type region with arsenic or antimony

1984-08-14

1986-12-16

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148190, 29571, 29576B, H01L 21385, H01L 21425

Patent

active

046295208

ABSTRACT:
A method of forming a shallow n-type region of a semiconductor device, such as a bipolar transistor or a MOS FET, includes the following steps. Forming a first film containing arsenic or antimony on a silicon substrate; forming a second film containing phosphorus on the first film; and diffusing the arsenic or antimony and the phosphorus into the semiconductor substrate out of the first and second films by heat-treatment. The diffused impurities of the arsenic or antimony and the phosphorus form the n-type region and the arsenic or antimony defines the depth of the n-type region.

REFERENCES:
patent: 4364166 (1982-12-01), Crowder et al.
patent: 4403392 (1983-09-01), Oshima
patent: 4404048 (1983-09-01), Vogelzang
patent: 4419810 (1983-12-01), Riseman
patent: 4495010 (1985-01-01), Kranzer
patent: 4512074 (1985-04-01), Sasaki
patent: 4542580 (1985-09-01), Delivorias

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