Method of forming shallow junctions

Details Method of forming shallow junctions Method of forming shallow junctions

1991-09-13

1993-02-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437141, 437225, 437228, 437950, 148DIG34, 148DIG37, 148DIG144, H01L 2100, H01L 2102, H01L 21225, H01L 21265

Patent

active

051837773

ABSTRACT:
A method of forming a shallow junction comprises the step of: forming a film including a hydrogen compound with one element selected from the group of boron, phosphorus arsenic to a thickness of several atom layers to 1000 .ANG. on a silicon substrate and annealing the film, whereby an impurity region having a depth of 1000 .ANG. or less and an impurity concentration of 10.sup.18 to 10.sup.21 cm.sup.-3 is formed in the surface layer of the silicon layer.

REFERENCES:
patent: 4382099 (1983-05-01), Legge et al.
patent: 4542580 (1985-09-01), Delivorias
patent: 4589936 (1986-05-01), Komatsu
patent: 4619036 (1986-10-01), Havemann et al.
patent: 4621411 (1986-11-01), Havemann et al.
patent: 4703551 (1987-11-01), Szluk et al.
Shibata, K., Reduced Pressure deposited arsenic-doped silicon film and its properties as a diffusion source, J. Appl. Phys. 54(2), Feb. 1983, pp.1086-1094.
Sameshima, T., Laser-Induced Melting of Predeposited Impurity Doping Technique used to Fabricate Shallow Junctions, Jour. of Appl. Phys. vol. 62, No. 2, 1987, pp. 711-713.
Usui, S., XeCl Excimer Laser-Doping of Silicon Using Phosphorus and Boron Film as a Diffusant Source, Japan, Jour. of Appl. Phys., 18th Int. Conf. on Solid State Devices and Materials, Aug. 1986, pp. 225-228.
Parekh, P., Arsenic-Doped Polycrystalline Silicon Film for Bipolar Integrated Circuits, Solid State Electronics, vol. 20, 1977, pp. 883-889.
Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, Aug. 25-27, 1987, pp. 319-322; B. Mizuno et al: "Plasma Doping into the Side-Wall of a Sub-0.5 .mu.m Width Trench".
International Electron Devices Meeting, Dec. 7-10, 1986, Los Angeles, pp. 58-61, IEEE, New York; R. Liu et al: "Mechanisms for Process-Induced Leakage in Shallow Silicided Junctions".
IEEE Electron Device Letters, EDL.8, No. 11, Nov. 1987, pp. 528-530, New York; T. Sugii et al: "Epitaxially Grown Base Transistor for High-Speed Operation".
Journal of Applied Physics, Vol. 62, No. 2, 1987, pp. 711-713, Am. Inst. of Physics, New York; T. Sameshima et al: "Laser-Induced Melting of Predeposited Impurity Doping Technique used to Fabricate Shallow Junctions".
Japanese Journal of Applied Physics, 18th Int. Conf. on Solid State Devices and Materials, Aug. 20-22, 1986, pp. 225-228, Tokyo; S. Usui et al: "XeCl Excimer Laser-Doping of Silicon using Phosphorus and Boron Film as a Diffusant Source".
Solid State Electronics, 1977, vol. 20, pp. 883-889, Great Britain; Parekh: "Arsenic-Doped Polycrystalline Silicon Film for Bipolar Integrated Circuits".

Affiliated with

Also associated with

Rating

Method of forming shallow junctions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming shallow junctions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming shallow junctions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-6750