Method of forming semicrystalline silicon article and product pr

Details Method of forming semicrystalline silicon article and product pr Method of forming semicrystalline silicon article and product pr

1978-12-11

1982-03-16

Powell, William A.

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

29572, 136261, 136264, 148187, 156647, 156648, 156657, 357 20, 357 30, 428620, H01L 21306

Patent

active

043201687

ABSTRACT:
A method of forming a semicrystalline silicon solar energy cell having individual grains of silicon at the light-receiving surface of the cell. Impurities in the silicon concentrated in the grain boundaries are removed by etching away at least substantial portions of the boundaries at the wafer surface and between adjoining grains so that, upon subsequent diffusion, a photovoltaic junction will be formed at the light-receiving surface and will extend into the interior of the wafer between adjoining grains.

REFERENCES:
patent: 2902419 (1959-09-01), Carasso
patent: 2904613 (1959-09-01), Paradise
patent: 3007830 (1961-11-01), Bardsley
patent: 3429756 (1969-02-01), Groves
patent: 3480818 (1969-11-01), TeVelde
patent: 4155785 (1979-05-01), Cuomo et al.

Affiliated with

Also associated with

Rating

Method of forming semicrystalline silicon article and product pr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming semicrystalline silicon article and product pr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semicrystalline silicon article and product pr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1642079