Method of forming semiconductor stalk structure by epitaxial gro

Details Method of forming semiconductor stalk structure by epitaxial gro Method of forming semiconductor stalk structure by epitaxial gro

1990-06-29

1991-07-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 78, 437 90, 437927, H01L 21302, H01L 21306

Patent

active

050343424

ABSTRACT:
A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.

REFERENCES:
patent: 4910165 (1990-03-01), Lee

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