Method of forming semiconductor material

Details Method of forming semiconductor material Method of forming semiconductor material

1996-05-01

1998-06-23

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117 3, 117902, C30B 2802

Patent

active

057699410

ABSTRACT:
(26) to the pull direction (23) used for growing a semiconductor ingot (36). Dislocations (34) in the ingot (36) terminate on the surface of the neck (37) of the ingot, and do not propagate into the body (38) of the ingot (36).

REFERENCES:
patent: 2858730 (1958-11-01), Hanson
patent: 4096025 (1978-06-01), Caslovsky et al.
patent: 4908094 (1990-03-01), Hosoi et al.

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