Method of forming semiconductor layers by vapor growth

Details Method of forming semiconductor layers by vapor growth Method of forming semiconductor layers by vapor growth

1974-04-11

1976-05-11

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148175, H01L 744

Patent

active

039560376

ABSTRACT:
A method of forming a second semiconductor layer on a first semiconductor layer by vapor growth is disclosed. The two semiconductor layers are of the same conduction type but have different impurity concentrations. In the forming process, a doping gas is supplied before the vapor growth of the second semiconductor layer is started whereby a steep impurity distribution is established in the vapor-growth boundary.

REFERENCES:
patent: 3170825 (1965-02-01), Schaarschmidt
patent: 3328213 (1967-06-01), Topas
patent: 3612958 (1971-10-01), Saito et al.

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