Method of forming semiconductor hetero interfaces

Details Method of forming semiconductor hetero interfaces Method of forming semiconductor hetero interfaces

1992-12-15

1995-06-06

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437238, 437239, 437919, 437939, 148DIG118, 148DIG14, 117 95, 117106, 117935, H01L 2120

Patent

active

054223067

ABSTRACT:
A method is disclosed of forming semiconductor hetero interfaces that will contribute to the performance improvement of devices having semiconductor hetero interfaces such as MOS transistors, quantum devices, capacitors and the like. The method comprises the steps of making the surface of a semiconductor substrate clean and flat in terms of atomic level by heating said semiconductor substrate in vacuum to a temperature at which reconstruction of the surface atoms of said semiconductor substrate takes place, then forming a structural buffer layer such as a native oxide layer and the like on said semiconductor substrate surface after the temperature of said semiconductor substrate was lowered to room temperature and finally subjecting the semiconductor substrate with said structural buffer layer formed on its surface to a thermal treatment performed in certain specified temperature and atmosphere. Accordingly, the semiconductor substrate surface becomes smooth in terms of atomic level and an ultra smooth semiconductor interface is formed.

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