Method of forming semiconductor devices through epitaxy

Details Method of forming semiconductor devices through epitaxy Method of forming semiconductor devices through epitaxy

2006-10-17

2006-10-17

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S050000, C438S052000

Reexamination Certificate

active

07122395

ABSTRACT:
A method for creating a semiconductor structure is provided. In accordance with the method, a semiconductor substrate (101) is provided over which is disposed a sacrificial layer (103), and which has a thin single crystal semiconductor layer (105) disposed over the sacrificial layer (103). An opening (107) is then created which extends through the semiconductor layer (105) and into the sacrificial layer (103). The semiconductor layer (105) is then epitaxially grown to a suitable device thickness, thereby resulting in a device layer. The semiconductor layer is grown such that the resulting device layer extends over the opening (107), and such that the surface of the portion of the device layer extending over the opening is single crystal silicon.

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