Method of forming semiconductor device with bipolar...

Details Method of forming semiconductor device with bipolar... Method of forming semiconductor device with bipolar...

2006-04-11

2006-04-11

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Complementary bipolar transistors

C438S335000

Reexamination Certificate

active

07026221

ABSTRACT:
A method of forming a semiconductor device, including forming first and second semiconductor layers of first conductivity type each disposed in a transistor forming region spaced apart from each other by a predetermined distance, so that the first semiconductor layer has a concentration higher than the second semiconductor layer; vapor-phase diffusing an impurity of second conductivity type into side faces of the second semiconductor layer which are exposed in the spaced region; embedding a non-doped semiconductor layer between the first and second semiconductor layers in the spaced region; and performing heat treatment to change the non-doped semiconductor layer into first conductivity type, a region of the vapor phase diffused side faces into the first conductivity type, and another region of the vapor phase diffused side faces into an intrinsic base region.

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patent: 5476799 (1995-12-01), Sakamoto et al.
patent: 5686323 (1997-11-01), Kataoka
patent: 5710442 (1998-01-01), Watanabe et al.
patent: 63-140571 (1988-06-01), None
patent: 11233521 (1999-08-01), None
patent: 2000-188295 (2000-07-01), None

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