Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2011-03-01
2011-03-01
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S253000, C438S256000
Reexamination Certificate
active
07897474
ABSTRACT:
A method of forming a semiconductor device may include, but is not limited to, the following processes. A second insulating film may be formed over a first insulating film. At least one through-hole may be formed, which penetrates the first and second insulating films. At least one first electrode may be formed, which extends at least along the side wall of the at least one through-hole. The first inter-layer insulator may be removed, while using the second insulating film as a temporary supporter that supports the at least one first electrode. At least one permanent supporter may be formed, which supports the at least one first electrode. The second insulating film as the temporary supporter may be removed, while leaving the at least one permanent supporter to support the at least one first electrode.
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Elpida Memory Inc.
Menz Laura M
Young & Thompson
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