Method of forming semiconductor device including a CMOS structur

Details Method of forming semiconductor device including a CMOS structur Method of forming semiconductor device including a CMOS structur

1992-09-08

1994-03-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 34, 437 45, 437 57, 148DIG9, H01L 21265

Patent

active

052907147

ABSTRACT:
A semiconductor device has, in one embodiment, a p type insulated gate field effect transistor formed in an n type well formed on a semiconductor substrate and an n type insulated gate field effect transistor formed in a p type well formed on the semiconductor substrate. Each of the p type and n type insulated gate-field effect transistors has a composite impurity layer under its gate electrode in a surface portion of its associated well. The composite impurity layer includes a first doped layer of a p type and a second doped layer of an n type adjacent thereto to form a pn junction layer therebetween, while the composite impurity layer includes a first doped layer of a p type and a second doped layer of a p type adjacent thereto to form a junction layer therebetween having a p type impurity concentration lower than that of the p type well.

REFERENCES:
patent: 4484388 (1984-11-01), Twasaki
patent: 4596068 (1986-06-01), Peters, Jr.
patent: 4948746 (1990-08-01), Beasom
patent: 5019520 (1991-05-01), Komosi et al.
patent: 5075242 (1991-12-01), Nakahara
patent: 5081052 (1992-01-01), Kobayashi et al.
patent: 5100811 (1992-03-01), Winnerl et al.
NIKKEI Electronics, Mar. 10, 1986, pp. 199-217.
Denshi Zairyo, Jun. 1986, pp. 75-79.
Submicron Devices, Maruzen, Co., Ltd., pp. 152-170.

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