Semiconductor device manufacturing: process – Making passive device
Patent
1997-09-29
1999-11-09
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
438140, 438454, H01L 2120
Patent
active
059813490
ABSTRACT:
The breakdown voltage of a semiconductor device, such as a transistor fabricated in a device region in and abutting the surface of a semiconductor body with a field oxide surrounding the device region, is improved by etching the field oxide abutting the device region to reduce the thickness thereof to about 0.6-1.4 .mu.m and then forming a field plate in the recessed field oxide which is capacitively coupled to the underlying semiconductor body. The field plate can be floating, connected to a voltage potential, or connected to the semiconductor device.
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Nguyen Tuan H.
Spectrian, Inc.
Woodward Henry K.
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