Method of forming semiconducting materials and barriers

Details Method of forming semiconducting materials and barriers Method of forming semiconducting materials and barriers

1989-08-16

1991-09-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG1, 437173, 437914, H01L 2120

Patent

active

050495232

ABSTRACT:
In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
Chittick et al., J. of Electrochemical Sue., vol. 116, No. 1 (Jan. 1969) pp. 77-81.

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