Method of forming self-aligned silicides

Details Method of forming self-aligned silicides Method of forming self-aligned silicides

2004-12-07

2008-10-07

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S581000, C438S630000, C438S755000

Reexamination Certificate

active

07432181

ABSTRACT:
A method of forming self-aligned silicides is described and applied to a substrate having an isolation area, which divides the substrate into a first area and a second area. A resist protective oxide layer is formed on the substrate, and subsequently a mask layer is formed on the resist protective oxide layer. Further, the mask layer includes an opening on the first area and another opening on a contact hole of the second area. When a resist protective oxide process is performed, the mask layer protects the resist protective oxide layer underlying the same from being removed, whereas the resist protective oxide layer under the openings are removed. Therefore, silicides are controlled to form on the first area and the contact hole of the second area in a subsequent self-aligned silicidation process.

REFERENCES:
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patent: 5792684 (1998-08-01), Lee et al.
patent: 6100145 (2000-08-01), Kepler et al.
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patent: 6693001 (2004-02-01), Nishihara et al.
patent: 6867130 (2005-03-01), Karlsson et al.
patent: 7157731 (2007-01-01), Taniguchi et al.

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