Method of forming self-aligned lateral bipolar transistor

Details Method of forming self-aligned lateral bipolar transistor Method of forming self-aligned lateral bipolar transistor

1981-05-11

1984-03-06

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 34, 357 91, H01L 2972, H01L 21225, H01L 2122

Patent

active

044352255

ABSTRACT:
A lateral bipolar transistor having a base width of 0.5 micron or less is made by forming a protective layer on an electrically insulating layer along a surface of a semiconductor body, forming an open space through the protective layer so as to define a guiding edge for it, introducing a first semiconductor dopant of a selected conductivity type into the body using the guiding edge to control the lateral extent of the first dopant, etching the insulating layer back under the protective layer a selected distance from the guiding edge, oxidizing material of the body exposed by the open space in the protective and insulating layers to form a composite electrically insulating region, removing the remainder of the protective layer, etching the insulating region sufficiently long to create an open space through it and thereby define another guiding edge, and introducing a second semiconductor dopant of the selected conductivity type into the body using this second guiding edge to control the lateral extent of the second dopant toward the first dopant and thereby to control the resulting base width.

REFERENCES:
patent: 3648125 (1972-03-01), Peltzer
patent: 3873989 (1975-03-01), Schinella et al.
patent: 3919005 (1975-11-01), Schinella et al.
patent: 3945857 (1976-03-01), Schinella et al.
patent: 3962717 (1976-06-01), O'Brien
patent: 3993513 (1976-11-01), O'Brien
patent: 4066473 (1978-01-01), O'Brien
patent: 4110779 (1978-08-01), Rathbone et al.
patent: 4143455 (1979-03-01), Schwabe et al.
patent: 4148054 (1979-04-01), Hart et al.
patent: 4168999 (1979-09-01), Vora et al.
patent: 4191595 (1980-03-01), Aomura et al.
patent: 4261763 (1981-04-01), Kumar et al.
patent: 4283236 (1981-08-01), Sirsi
patent: 4298402 (1981-11-01), Hingarh
patent: 4357622 (1982-11-01), Magdo et al.
Projected Range Statistics, 2nd Edition, Ed. Gibbons et al., DHR, Stroudsburg, Pa, 1975.
Peltzer, 1972 Wescon Tech. Papers, Sep. 1972, pp. 1-4.
Stephen, Proc. Int. Microelectronics Conf., Anaheim, Calif., Feb. 1975, pp. 88-97.

Affiliated with

Also associated with

Rating

Method of forming self-aligned lateral bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming self-aligned lateral bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming self-aligned lateral bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-740082