Method of forming self-aligned implanted channel-stop and buried

Details Method of forming self-aligned implanted channel-stop and buried Method of forming self-aligned implanted channel-stop and buried

1984-09-14

1986-03-04

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29574, 29576B, 29578, 29576W, 148 15, 148175, 148188, 148DIG102, 148DIG85, 148DIG106, 148DIG111, 148DIG122, 156612, 156628, 156653, 156657, 1566591, 357 48, 357 50, 357 59, 427 86, H01L 2120, H01L 2174, H01L 2176

Patent

active

045732574

ABSTRACT:
A process is described for fabricating self-aligned buried doped regions in semiconductor devices and integrated circuits which avoids any need for delineation of the buried doped regions in the active portions of the device. Avoiding delineation improves the quality of the epitaxial layer used to cover the buried doped regions thereby improving overall performance and yield. Multiple mask layers are used in connection with a single mask pattern to achieve self-alignment. One mask layer consists of a material with a modifiable etch rate, e.g. polysilicon. A portion of the single crystal substrate is rendered non-single crystal and used as an alignment key which is propagated through the epitaxial layer grown over the undelineated buried doped regions. The dimensions and separations of the self-aligned buried doped regions can be precisely controlled.

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