Method of forming self aligned extended base contact for a bipol

Details Method of forming self aligned extended base contact for a bipol Method of forming self aligned extended base contact for a bipol

1991-08-12

1993-07-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437202, 148DIG11, 148DIG19, H01L 21265

Patent

active

052273164

ABSTRACT:
There is disclosed herein a bipolar transistor structure having a self aligned extended silicide base contact. The contact extends to the position of a base contact window located outside the perimeter of the isolation island on a contact pad formed over the field oxide. This allows the size of the isolation island to be kept smaller and allows a smaller extrinsic base region to be formed. The base contact is formed of titanium and titanium silicide where the titanium/silicide boundary is self aligned with the edge of the device isolation island. The silicide is formed by reacting the titanium which completely covers the exposed epitaxial silicon inside the isolation island. An anisotropically etched oxide sidewall spacer insulates the silicide from the sidewall of the silicide-covered, polysilicon emitter contact.

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