Method of forming self-aligned buried contact

Details Method of forming self-aligned buried contact Method of forming self-aligned buried contact

1995-12-15

1996-11-19

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437193, 437195, H01L 2144

Patent

active

055762425

ABSTRACT:
Disclosed is a method of forming self-aligned buried contact implementing self-alignment technology into buried contact process to prevent failure of semiconductor elements due to disconnection of wiring which is caused by misalignment. This is done by forming a sidewall spacer in the recess on the buried contact region. The tolerance of misalignment is greatly increased because a polysilicon layer will contact with the buried contact region if the polysilicon layer could contact the sidewall spacer.

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patent: 5318925 (1994-06-01), Kim
patent: 5427980 (1995-06-01), Kim
patent: 5494848 (1996-02-01), Chin
patent: 5525552 (1996-06-01), Huang

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