Method of forming selective polysilicon wiring layer to source,

Details Method of forming selective polysilicon wiring layer to source, Method of forming selective polysilicon wiring layer to source,

1987-05-08

1988-09-06

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG140, 357 91, 437 31, 437 34, 437 39, 437 46, 437 54, 437186, H01L 21265, H01L 2122

Patent

active

047693371

ABSTRACT:
A method of manufacturing a semiconductor device, comprises the process of forming first and second well regions, which are of N-type and P-type, respectively, in a silicon body, forming a base layer of P-type in the first well region, forming an emitter layer of N-type in the base layer, forming source and drain layers of N-type in the second well region, forming a polysilicon emitter electrode on the emitter layer, and ion-implanting impurities of N-type into an interface between the emitter layer and the emitter electrode, so as to break down an insulative layer at the interface.

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Hung et al., Appl. Phys. Lett. 43 (1983) 1123.
Van Ommen et al., Jour. Appl. Phys. 58 (1985) 4043.

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